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 SIM3 is a physics-based,
accurate, scalable, robustic and predictive MOSFET SPICE model for circuit
simulation and CMOS technology development. It is developed by the
BSIM Research Group in the Department of Electrical Engineering and Computer
Sciences (EECS) at the University of California, Berkeley. The third iteration
of BSIM3, BSIM3 Version 3 (commonly abbreviated as BSIM3v3),
was established by SEMATECH as the first industry-wide standard of its kind
in December of 1996. BSIM3v3 has since been widely used by most semiconductor
and IC design companies world-wide for device modeling and CMOS IC design.
All suggestions for model improvements are charted by the Compact Model Council
(CMC). It is a consortium of semiconductor companies and simulator vendors
world-wide promoting BSIM3v3 development as the industry standard compact model.
The council is affliliated with Electronic Industries
Alliance (EIA). For more information on CMC and a list of its member companies,
please visit the web site at CMC.
Mission The BSIM Research Group seeks to assist companies in the successful adoption, implementation and use of BSIM3v3. We will provide technical support in using BSIM3v3 and conduct timely fixes of any errors in the model implementation. Most important, we will continue to enhance the model and incorporate more advanced device physics for sub-0.1um CMOS technology. A Note on Naming Convention The first version of BSIM3v3 was BSIM3 Version 3.0. Subsequent model release will be designated with different version numbers. For example, the latest version is named BSIM3 Version 3.2 (BSIM3v3.2). For more details on BSIM3v3.2 refer to Get Latest Version. The BSIM Research Group BSIM Research Group currently includes the following people:
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The Device Group Department of EECS UC Berkeley |
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Comments? Mail Tanvir Morshed Contents are Copyright © 2009 UC Regents All rights reserved. |