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 SIM4, as the
extension of BSIM3 model, addresses the MOSFET physical effects into
sub-100nm regime. It is a physics-based,
accurate, scalable, robustic and predictive MOSFET SPICE model for circuit
simulation and CMOS technology development. It is developed by the
BSIM Research Group in the Department of Electrical Engineering and Computer
Sciences (EECS) at the University of California, Berkeley. All suggestions for model improvements are charted by the Compact Model Council
(CMC). It is a consortium of semiconductor companies and simulator vendors
world-wide promoting BSIM3v3 development as the industry standard compact model.
The council is affliliated with Electronic Industries
Alliance (EIA).
The BSIM Research Group BSIM Research Group currently includes the following people:
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The Device Group Department of EECS UC Berkeley |
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Comments? Mail Morgan Young. Contents are Copyright © 1997 UC Regents All rights reserved. |