Dear BSIM users,

We are releasing BSIM3v3 today. Since the release of BSIM3v3 (beta) 
in July, we have received a lot of feedback and inputs. Taking this chance 
here,  I would like to sincerely thank Christopher Lyons at Analog, Keith 
Green and Tom Vrotsos at TI, Colin McAndrew and David Newmark at Motorola,  Seamus Power at Silvaco,  Pratheep Balasingam and Bill Scott at Metasoftware, David 
Angst at SGI, Pascal Vivet at Anacad and  others  for  comments and 
suggestions  that improved the present release.  

Following are the differences between this final release and the beta 
version:
 
(1) The Vth model has been enhanced to model the short channel and 
narrow width effects more accurately.

(2) A new drain bias dependence of subthreshold swing is introduced 
to improve the  model accuracy in subthreshold region.

(3) Gate bias dependencies of bulk charge effect (Abulk) and 
parasitic series resistances (Rds) are introduced to improve the accuracy.

(4) A mobility model with stronger body bias dependence  is added as 
a  user option. 

(5) A thermal noise model option  is introduced. It's more accurate 
and physically correct in the linear region than the old model.

(6) NQSMOD (non-quasi-static AC model option) can now be specified as 
an instant    parameter. 

(7) Some bugs in the code have been fixed.

The model equations,  parameter list  and source codes  have been put 
on the FTPsite. You can  get  them by FTP according to the instruction 
enclosed in  this letter. The updated manual will be put on the FTP site  soon.

Thanks again for your kind support and encouragement  on the BSIM 
research. Eventhough we have released the BSIM3v3 formally, I hope you will 
continue to send us your suggestions and comments  so that we can  develop more 
advanced BSIM model for your use  in the  future.


Best Regards,


Chenming Hu