Dear BSIM3 users, BSIM3v3, ie, BSIM3 Version 3, will be released in ten days. You may get a copy of the BSIM3v3 source code by anonymous FTP. Benchmark test circuits will be provided through FTP too. Instructions on how to FTP the code is attached at the end of this email. Documentation and other news regarding future updates and enhancements will be also accessible in the same manner. BSIM3v3 differs from BSIM3v2 in the following ways: 1. A single Ids(Vds,Vgs) expression describes current from the subthreshold to the strong inversion regions as well as from the linear to the saturation regions. As a result, Id, gm, gds and their derivatives with respect to Vds, and Vgs are continous. 2.Delta L ('DL') and delta W ('DW') are renamed LINT and WINT, respectively. The 'INT' suffix stands for the 'INTercept' of Vd/Id versus Ldrawn plot use to extract delta L. This is to avoid the confusion with the new delta L and delta W now called 'DLC' and 'DWC' in the capacitance model. Furthermore, LINT and WINT are now functions of L and W to improve the model accuracy in the very small Ldrawn aand Wdrawn regime. 3. Accuracy in the small W regime is further improved with a more physical Rds and Vbs dependencies. 4. The overlap capacitance now includes a bias independent part to model the effective n+ source/drain overlap capacitance. In addition, a gate bias dependent part is included to account for the depletion of the lightly doped (LDD) source/drain region. 5. The capacitance model now also has a new short-channel model that is accurate to 0.2um. The inversion capacitance is no longer discountinuous at the threshold voltage. This improves accuracy, without any extracted parameters. 6. Bias independent gate outer fringing capacitances are added between gate and source, gate and drain. 7. Four flags, Lmax, Lmin, Wmax and Wmin, are introduced to record the ranges of L and W ones for which model parameters are extracted. BSIM3v3 continues to have the following strengths from the basic BSIM3 (version 2) model: 1. It is a physically based, 2. It is a predictive model. 3. It is accurate in Ids, output resistance, and the noise. 4. It can fit devices within a wide range of W and L with single set of model parameters. We need your help to bullet-proof this new version. To facilitate this we will call the April release BSIM3v3alpha. Please examine the model in the next month for continuity ("smoothness"), charge conservation, convergence, benchmark simulation speed as well as other potential qualitative and quantitative problems. We will incorporate your subsequent inputs into BSIM3v3beta, which will be released in mid-May. The final BSIM3v3 code will be released before July. Your prompt evaluation of BSIM3v3alpha in April and BSIM3v3beta later is urgently requested. Here is your chance to help make BSIM3 version 3 a standard open model. The contact person for BSIM3v3 is Dr. Yuhua Cheng (E-mail: yuhua@bsim.eecs.berkeley.edu). Unfortunatly, I must ask for your understanding in advance since we do not have the man power to provide "product support" other than continuing to improve the model in general. However, we have set up a BSIM3 users e-mail network (address listed below). I have taken the liberty of enrolling some of you in this network. You may remove or add your name by sending email request to yuhua@bsim.eecs.berkeley.edu. We hope you will take advantage of this network to ask questions and/or share answers for future model upgrades. We are making the BSIM3v3 code and documention available by FTP. However, you stiil need to go through the ILP software Distribution (Email: ilpsoft@eecs.berkeley.edu) to obtain a copy of the SPICE3e2 with BSIM3v3 implemented in it. Please note that the standard ILP software license agreement still applies. Briefly, you may use, duplicate, modify, and distribute (but not sell) BSIM3v3 code and documentation provided that you reproduce the license agreement and acknowledge the UC Berkeley BSIM Research Project as the source. BSIM3v3 was developed by Mr. Mansun Chan Mr. Kelvin Hui Dr. Yuhua Cheng Mr. Kai Chen Prof. Ping Ko Prof. Chenming Hu Dr. Zhihong Liu (BTA Technology, Inc.) Dr. Minchie Jeng (Cadence Design System, Inc.) Dr. Jian-hui Huang (Intel Corp.) In addition Mr. James Chen complied the documentation and Mr. Robert Tu set up the electron distribution for BSIM3v3. Sincerely, Chenming Hu P.S. INSTRUCTIONS of FTP BSIM3V3 FILES: The BSIM3 anonymous ftp site contains the following files. bsim3.tar.Z - a compressed and tarred file of the BSIM3v3 source code directory bsim3.ps.Z - a postscript file of the BSIM3v3 manual This is the procedure to obtain these files. 1. ftp rely.eecs.berkeley.edu or ftp 128.32.156.10 2. login in as "anonymous" 3. Enter as the password. 4. Type "binary" 5. Change directory to /pub/bsim3 6. Use "get" to obtain the files. Once bsim3.tar.Z is in your directory, type the commands uncompress bsim3.tar.Z tar -xvf bsim3.tar and a directory /bsim3 will be created containing all of the BSIM3 files. To print the manual, type uncompress bsim3.ps.Z lpr bsim3.ps mailing list address: bsim3list@rely.eecs.berkeley.edu subscribing to mailing list: yuhua@bsim.eecs.berkeley.edu A World-Wide Web home page has been created at http://rely.eecs.berkeley.edu:8080/bsim3www/bsim3.html It contains the files available from the BSIM3 anonymous ftp site as well as official BSIM3 news (which will also be posted to the BSIM3 mailing list).