Dear BSIM Users,
 
Thank you for your support of the BSIM models. We are releasing BSIM4.6.2 today (July 31, 2008).

Compared with BSIM4.6.1, several new features are added in this version.

1)	Mobility model (mobMod=3) is added to enhance the modeling of Coulombic scattering in the high-k/metal gate transistors.

2)	Trap assisted tunneling (TAT) has been improved to include the width dependence. A new model parameter JTWEFF is introduced and set to zero to maintain the backward compatibility.

3)	Bug fixes:

(a)	Output Conductance Model: VASCBE
A division by zero bug in the output conductance calculation is fixed.
(b)	Thermal Noise Model (tnoiMod=0)
The scaling factor NF is added to the equivalent resistance Rds/NF.
   (c) Negative Thermal Noise (tnoiMod=1)
      The noise spectral density will not be negative now.
(d)	Source/Drain Bulk Junction Capacitance
The source/drain bulk junction capacitance will not be discontinuous when Vbs/Vbd is zero. The S/D junction sidewall capacitance along the isolation edge is set to zero if they are negative.
(e)	Derivative Issue in Capacitance Model (capMod=0)
An error in the derivative calculation of dVgs_eff_dVg has been fixed.
(f)	Toxp Calculation (mtrlMod=1)
The physical oxide thickness should be lay-out independent.
(g)	Source/Drain Resistance
A division by zero bug in the Rend calculation is fixed.
(h)	Typo of SC
SCA is a typo of SC in b4.c
(i)	Drain/Body Breakdown Voltage
The reset value of drain/body breakdown voltage will not cause non-convergence now. Some other similar bugs have also been fixed.

The complete list of enhancements, bugs and fixes and the users who reported them, the BSIM4.6.2 source code, BSIM4.6.2 user manual, BSIM4.6.2 document and testing examples can be downloaded at:  http://www-device.eecs.berkeley.edu/~bsim3/bsim4_get.html 
We would like to express our sincere thanks to all the users who gave us suggestions.  
We thank you for your support for BSIM and welcome your feedback on this latest release of BSIM4.
 
Sincerely,
 
BSIM Team
UC Berkeley