Dear BSIM Users,
 
Thank you for your support of the BSIM models. We are releasing BSIM4.6.0 
version  today (December 13, 2006). 
 
Compared with BSIM4.5.0, several new features are added in this version.
 
1. In BSIM4.5.0, the GIDL and GISL leakage current modules shared the parameter
set. In BSIM4.6.0,the Igisl and Igidl modules have independent model parameters.

2. The parameters for the source and drain side junction diode current due to the
trap-assisted tunneling current in space-charge region have been fully separated.

3. The parameters for the gate tunneling current in the S/D overlap diffusion 
regions (Igs/Igd) have been separated.

In addition three bug fixes are implemented in this version. 

1. Following the bug report from ADI, the implementation of columb scattering
in mobility model has been changed to avoid the non-monoticity in drain current
as a function of gate voltage.  Also the default value of parameter has been 
changed to 0. 

2. Following the bug report from Mentor Graphics,the accuracy of RgateMod = 2 has been improved 
by accounting correctly the contribution from Rgate to overall noise. The change has been 
made in b4noi.c

3. The default value for the model parameter VFB was missing. The default value of the
parameter VFB has ben now set to -1.0V in b4set.c


The complete list of enhancements, bugs and fixes and the users who reported them, the 
BSIM4.6.0 source code, BSIM4.6.0 user manual, BSIM4.6.0 document and testing examples can  
be downloaded at:  http://www-device.eecs.berkeley.edu/~bsim3/bsim4_get.html
 
BSIM4.6.0 received intensive evaluation by TI and ADI. Their testing materially improved the 
quality   of the present release. Special thanks go to Geoffrey Coram, Keith Green and Claude Cirba. 
We would also like to express our sincere thanks to all the other users who gave us suggestions.  
 
We thank you for your support for BSIM and welcome your feedback on this latest release
of BSIM4.
 
Sincerely,
 
BSIM Team
UC Berkeley