Dear BSIM Users,

Thank you for your support of the BSIM models. We are releasing
the BSIM4.2.0 model today.

The improvements incorporated into BSIM4.2.0 are bug fixes and two new
parameters XL,XW. These changes were discussed and approved at the December 
2000 and March 2001 Compact Model Council (CMC) Meetings.  

XL and XW are geometry offset parameters due to mask/etch effect with 
default values of 0.0. With these changes, the BSIM3 parasitic resistance 
model file becomes a compatible subset of the BSIM4 parasitic resistance 
model.  Also, the computation efficiency is enhanced due to a better 
extraneous node allocation strategy .

The BSIM4.2.0 source code, list of bugs and fixes, and the model 
documentation can be downloaded at
http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html

We welcome your feedback on this model.

Sincerely,

Chenming Hu
=============================================================
Chenming Hu, TSMC Distinguished Professor of Microelectronics
Dept. of Electrical Engineering and Computer Sciences
University of California, Berkeley, CA, 94720
Email: hu@eecs.berkeley.edu
=============================================================