Dear BSIM Users,

Thank you for your support of the BSIM models. We're releasing
the BSIM4.0.0 model code today.

This model is developed to explicitly address many issues in
modeling sub-0.13 micron CMOS technology and RF high-speed CMOS
circuit simulation. The plans and progress of the development
were presented and discussed at serveral Compact Model Council
(CMC) meetings in 1998 and 1999 period. Many inputs and serveral
requests from those meetings were incorporated into the model.
BSIM4 beta versoin was tested by CMC member companies and their
feedback was incorporated into BSIM4.0.0.

BSIM4.0.0 has the following major improvements and additions
over BSIM3v3:

  (1)  an accurate new model of the intrinsic input resistance
       for both RF, high-frequency analog and high-speed
       digital applications;

  (2)  flexible substrate resistance network for RF modeling;

  (3)  a new accurate channel thermal noise model and a noise
       partition model for the induced gate noise;

  (4)  a non-quasi-static (NQS) model that is consistent with
       the Rg-based RF model and a consistent AC model that
       accounts for the NQS effect in both transconductances
       and capacitances.

  (5)  an accurate gate direct tunneling model;

  (6)  a comprehensive and versatile geometry-dependent parasitics
       model for various source/drain connections and multi-finger
       devices;

  (7)  improved model for steep vertical retrograde doping profiles;
 
  (8)  better model for pocket-implanted devices in Vth, bulk
       charge effect model, and Rout;

  (9)  asymmetrical and bias-dependent source/drain resistance,
       either internal or external to the intrinsic MOSFET at
       the user's discretion;

  (10) acceptance of either the electrical or physical gate
       oxide thickness as the model input at the user's choice
       in a physically accurate maner;

  (11) the quantum mechanical charge-layer-thickness model for
       both IV and CV;

  (12) a more accurate mobility model for predictive modeling;
 
  (13) a gate-induced drain leakage (GIDL) current model,
       available in BSIM for the first time;
 
  (14) an improved unified flicker (1/f) noise model, which is
       smooth over all bias regions and considers the bulk
       charge effect;
 
  (15) different diode IV and CV charatistics for source and
       drain junctions;

  (16) junction diode breakdown with or without current limiting; and

  (17) dielectric constant of the gate dielectric as a model parameter. 

We have been helped by the input from many users, especially the CMC
member companies and their representatives. We would particularly like
to thank the CMC members for proposing the geommetry-dependent parasitics
model, which was drafted by Josef Watts and further enhanced by Jon Sanders.

BSIM4.0.0 beta received intensive evaluation by the TI Mixed Signal
Products group. Their testing materially and substantially improved
the quality of the present prodution release. We would particularly
like to thank Keith Green, Karthik Vasanth, William Liu, Britt Brooks,
Doug Weiser, Brian Mounce, Jon Krick, Jim Hellums, Vinod Gupta, and
Tom Vrotsos for their invaluable test effort. We would also like to
thank Wenliang Zhang and Bob Daniels of Avant!, and John O'Donovan
and Kristin Beggs of Cadence for bug reports.

We appreciate these companies providing us with device data during
the BSIM4 development: TI, Hitachi, AMD, IBM, and Conexant.

BSIM4 research is partially supported by SRC, CMC, Conexant, Mentor
Graphics and TI.

The BSIM4 model was developed by Professor Chenming Hu, Research Engineer
Weidong Liu, and graduate students Xiaodong Jin, Kanyu M. Cao and Jeff Ou.

Sincerely,

Chenming Hu
=============================================================
Chenming Hu, TSMC Distinguished Professor of Microelectronics
Dept. of Electrical Engineering and Computer Sciences
University of California, Berkeley, CA, 94720
Email: hu@eecs.berkeley.edu
=============================================================


The BSIM4.0.0 source code can be downloaded at
  http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html
Technical Contact:
  Weidong Liu:  liuwd@bsim.eecs.berkeley.edu