BSIM4 Beta Versions
BSIM4 Latest Release
BSIM4 Archive

BSIM4, as the extension of BSIM3 model, addresses the MOSFET physical effects into sub-100nm regime. It is a physics-based, accurate, scalable, robustic and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. It is developed by the BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley. All suggestions for model improvements are charted by the Compact Model Coalition (CMC).
BSIM4 has been used for the 0.13 um, 90 nm, 65 nm, 45/40 nm, 23/28 nm, and 22/20nm technology nodes.

People of BSIM4 Project
BSIM4 Research Group currently includes the following people:
Chenming Hu
Ali Niknejad

Current Developer
Sourabh Khandelwal
Yogesh Singh Chauhan

Past BSIM4 Model Contributors:
Ping Ko
Mark Cao
Mansun Chan
Wenwei(Morgan) Yang
Tanvir Morshed
James C. Chen
Kai Chen
Yuhua Cheng
Mohan Dunga
JianHui Huang
Kelvin Hui
MinChie Jeng
Xiaodong Jin
Chung-Hsun Lin
Weidong Liu
ZhiHong Liu
Robert Tu
Xuemei (Jane) Xi