BSIM4, as the extension of BSIM3 model, addresses the MOSFET physical effects into sub-100nm regime. It is a physics-based, accurate, scalable, robustic and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. It is developed by the BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley. All suggestions for model improvements are charted by the Compact Model Coalition (CMC).
BSIM4 has been used for the 0.13 um, 90 nm, 65 nm, 45/40 nm, 23/28 nm, and 22/20nm technology nodes.
People of BSIM4 Project
BSIM4 Research Group currently includes the following people:
Yogesh Singh Chauhan
Past BSIM4 Model Contributors:
James C. Chen
Xuemei (Jane) Xi